CMPT491E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT491E type is
an Enhanced version of the industry standard 491 NPN
silicon transistor. This device is manufactured by the
epitaxial planar process and epoxy molded in an
SOT-23 surface mount package. The CMPT491E
features Low VCE(SAT), high hFE, and has been
designed for high current general purpose amplifier
applications.
MARKING CODE: C49
COMPLEMENTARY TYPE: CMPT591E
FEATURED ENHANCED SPECIFICATIONS:
♦ VCE(SAT) @ 1.0A = 0.4V MAX (from 0.5V MAX)
♦ hFE @ 500mA = 200 MIN (from 100 MIN)
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
ICM
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless
SYMBOL
TEST CONDITIONS
ICBO
VCB=60V
IEBO
VEB=4.0V
BVCBO
IC=100µA
BVCEO
IC=10mA
BVEBO
IE=100µA
IC=500mA, IB=50mA
♦ VCE(SAT)
IC=1.0A, IB=100mA
♦ VCE(SAT)
VBE(SAT)
IC=1.0A, IB=100mA
VBE(ON)
VCE=5.0V, IC=1.0A
♦ hFE
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=500mA
♦ hFE
hFE
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=2.0A
fT
VCE=10V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
otherwise noted)
MIN
80
60
5.0
1.0
200
2.0
350
-65 to +150
357
MAX
100
100
80
60
5.0
0.20
0.40
1.1
1.0
200
200
50
15
150
UNITS
V
V
V
A
mA
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
600
10
MHz
pF
♦ Enhanced specification
R4 (27-January 2010)
CMPT491E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C49
R4 (27-January 2010)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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